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Vishay SIHP10N40D-E3 IGBT

訂 貨 號:SIHP10N40D-E3      品牌:威世_Vishay

庫存數量:10             品牌屬性:

品牌商價:¥0.00

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Vishay SIHP10N40D-E3 IGBT
產品詳細信息

Vishay MOSFET

The Vishay through-hole mount N-channel TO-220AB-3 MOSFET is a new age product with a drain-source voltage of 400V and a maximum gate-source voltage of 30V. It has a drain-source resistance of 600mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 147W and continuous drain current of 10A. It has a driving voltage of 10V. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

? Fast switching
? High body diode for durability
? Lead (Pb) free component
? Low area specific on-resistance
? Low figure-of-merit (FOM): Ron x Qg
? Low input capacitance (Ciss)
? Operating temperature ranges between -55°C and 150°C
? Reduced capacitive switching losses
? Simple gate drive circuitry

Applications

? Battery chargers
? Displays (LCD or plasma TVs)
? Motor drives
? SMPS power supplies
? Welding - Induction heating

Certifications

? ANSI/ESD S20.20:2014
? BS EN 61340-5-1:2007
? UIS tested


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