SUPERFET III MOSFET is ON Semiconductor’s brand?new high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
700 V @ TJ = 150 oC
Leadless Ultra-thin SMD package
Kelvin contact
Ultra Low Gate Charge (Typ. Qg = 33 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 305 pF)
Optimized Capacitance
Typ. RDS(on) = 152 mΩ
Moisture Sensitivity Level 1 guarantee
Internal Gate Resistance: 0.5 Ω
Benefits:
Higher system reliability at low temperature operation
High power density
Low gate noise and switching loss
Low switching loss
Low switching loss
Lower peak Vds and lower Vgs oscillation
Applications:
Computing
Telecommunication
Industrial
End Products:
Telecom / Server
Adapter
LED Lighting
| 屬性 | 數值 |
|---|---|
| 通道類型 | N |
| 最大連續漏極電流 | 17 A |
| 最大漏源電壓 | 650 V |
| 封裝類型 | Power88 |
| 安裝類型 | 表面貼裝 |
| 引腳數目 | 4 |
| 最大漏源電阻值 | 180 mΩ |
| 通道模式 | 增強 |
| 最大柵閾值電壓 | 4.5V |
| 最小柵閾值電壓 | 2.5V |
| 最大功率耗散 | 139 W |
| 晶體管配置 | 單 |
| 最大柵源電壓 | ±30 V |
| 最高工作溫度 | +150 °C |
| 長度 | 8mm |
| 典型柵極電荷@Vgs | 33 nC @ 10 V |
| 每片芯片元件數目 | 1 |
| 寬度 | 8mm |
